Jiang S, Cai Y, Feng P, Shen S, Zhao X, Fletcher P, Esendag V, Lee K & Wang T (2020) Explore an approach towards the intrinsic limits of GaN electronics.Jiang S, Lee KB, Pinchbeck J, Yin Y & Houston PA (2020) A 624 V 5 A all-GaN integrated cascode for power-switching applications.Journal of Physics D: Applied Physics, 54(10). Pinchbeck J, Lee KB, Jiang S & Houston P (2021) Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects.UV LEDs (wavelength: 250-350nm) design and device fabrication.Novel vertical high voltage (>600V) GaN transistors.Monolithic integrations of GaN electronics.High temperature operation of GaN-based transistors.High speed/frequency RF GaN transistors.High voltage and high current AlGaN/GaN-based transistors.MEng in Electronic Engineering (Solid State Devices), University of Sheffield, UK.PhD in Electronic and Electrical Engineering, University of Sheffield, UK.I am a member of committee of the UK Nitrides Consortium and program committee member for UK Semiconductor Conference. I am particularly interested in employing novel integration techniques to achieve high efficiency GaN electronic devices and systems. My current research focuses on utilising GaN in electronics applications including radio-frequency (such as amplifiers in 5G mobile communications and military radars) and high speed power conversion (such as 48V-1kV DC power supplies, inverters for photovoltaic systems). I have spent nearly 4 years in my PhD working in this area and our group has demonstrated the first GaN-based UV LEDs in the UK. In addition to visible light, GaN is also capable in emitting ultra- violet (UV) light efficiently which can be used in applications such as water purifications. Visible light emitting diodes (LEDs) found in solid-state light bulbs and TV screens are mainly made from GaN. My main research interest is on GaN semiconductor material and devices for both optoelectronic and electronic applications. In 2013, I returned to this department and I am currently a lecturer in GaN Electronic Devices. I spent a year and a half at Singapore to develop next generation 600V high power GaN transistors for power conversion applications. After 2 years as a post-doctoral research associate working on gallium nitride (GaN) electronic devices for radio-frequency (RF) applications at the Department, I moved to Singapore and joined Institute of Microelectronics as a scientist. I graduated from the Department (M.Eng 2004, Ph.D. Conferences, events, visitor accommodation and weddings.Worldwide Universities Network at Sheffield.Research centres, institutes and networks.
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